STACKING-FAULT EXCITONS IN AGBR MICROCRYSTALS WITH TWIN PLANES

Authors
Citation
A. Marchetti, STACKING-FAULT EXCITONS IN AGBR MICROCRYSTALS WITH TWIN PLANES, Radiation effects and defects in solids, 137(1-4), 1995, pp. 1303-1306
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
137
Issue
1-4
Year of publication
1995
Pages
1303 - 1306
Database
ISI
SICI code
1042-0150(1995)137:1-4<1303:SEIAMW>2.0.ZU;2-T
Abstract
The visible emission and excitation spectra of AgBr microcrystals cont aining single and parallel double twin planes has been obtained. A ban d at 462.28 nm (2.6813 eV) is observed in the excitation spectrum. Thi s feature is about 2.5 meV below the indirect exciton band edge. Coinc ident emission features are observed. The band in the excitation spect rum of microcrystals with two parallel twin planes is often split into a doublet with splittings between 1 and 2 meV. The new band is assign ed to an exciton created at a stacking fault and the splittings are th ought to be due to tunnelling of the exciton between proximate twin pl anes.