Samples of CdS doped silica thin films have been prepared with weight
concentrations ranging from 0.5 to 20% (CdO/SiO2). Nanocrystal structu
re and size distribution are determined by Transmission Electron Micro
scopy (TEM) and image analysis. The mean size is tile same for all con
centrations (4 nm) and is related to the matrix porosity. The linear a
bsorption shows characteristic features of the excitonic level and the
gap blue shift due to the quantum confinement. Non-linear optical pro
perties are studied by Degenerate Four Waves Mixing (DFWM) to measure
the third order susceptibility chi((3)) which is high (typically 10(-7
) esu) and depends linearly of the volume fraction of the semiconducto
r particles.