ATOMIC TRANSPORT OF OXYGEN IN NONSTOICHIOMETRIC OXIDES

Citation
Jl. Routbort et Gw. Tomlins, ATOMIC TRANSPORT OF OXYGEN IN NONSTOICHIOMETRIC OXIDES, Radiation effects and defects in solids, 137(1-4), 1995, pp. 1459-1464
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
137
Issue
1-4
Year of publication
1995
Pages
1459 - 1464
Database
ISI
SICI code
1042-0150(1995)137:1-4<1459:ATOOIN>2.0.ZU;2-0
Abstract
Atomic transport of oxygen in nonstoichiometric oxides is an extremely important topic that overlaps science and technology. In many cases, diffusion of oxygen controls sintering, grain growth, and creep. High oxygen diffusivity is critical for efficient operation of many fuel ce lls. Additionally, oxygen diffusivities are an essential ingredient in any point defect model. Secondary ion mass spectrometry (SIMS) is the most accurate modem technique for measuring oxygen tracer diffusion. This paper will briefly review the principles and applications of SIMS for the measurement of oxygen transport. Case studies will be taken f rom recent work on ZnO and selected high-temperature superconductors.