Jl. Routbort et Gw. Tomlins, ATOMIC TRANSPORT OF OXYGEN IN NONSTOICHIOMETRIC OXIDES, Radiation effects and defects in solids, 137(1-4), 1995, pp. 1459-1464
Atomic transport of oxygen in nonstoichiometric oxides is an extremely
important topic that overlaps science and technology. In many cases,
diffusion of oxygen controls sintering, grain growth, and creep. High
oxygen diffusivity is critical for efficient operation of many fuel ce
lls. Additionally, oxygen diffusivities are an essential ingredient in
any point defect model. Secondary ion mass spectrometry (SIMS) is the
most accurate modem technique for measuring oxygen tracer diffusion.
This paper will briefly review the principles and applications of SIMS
for the measurement of oxygen transport. Case studies will be taken f
rom recent work on ZnO and selected high-temperature superconductors.