SCHOTTKY BARRIERS IN SUPERIONIC CRYSTALS

The phenomena of Schottky barrier creation in RbAg4I5 are studied. Lum inescence with high spatial resolution is used as a tool for investiga tion of the process on the blocking electrode-solid electrolyte bounda ry. The profile of the distribution of electronic centers near the con tact region is measured. The presence of electrons and ions in the dep letion region at the interface between the RbAg4I5 and the graphite el ectrode is established and interpreted within the framework of the mod ified Schottky model. The kinetics of the creation of Schottky barrier s is measured and described by taking into account the presence of sel f-trapped electrons and mobile silver ions in RbAg4I5. It is shown tha t the small value of the self-trapped electron diffusion coefficient ( D-st similar or equal to 1 x 10(-8)cm(2)/sec) limit the kinetics of th e process of creation of Schottky barriers.