PARAMETER EXTRACTION OF MOSFETS OPERATED AT LOW-TEMPERATURE

In this paper, an overview is given of the methods for practical param eter extraction for MOSFETs operated at cryogenic temperatures. The me thods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate lengt h is derived. Whenever possible, the physical basis of the mostly semi -empirical methods will be outlined. Finally, pitfalls and problems, r elated to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.