THEORETICAL AND EXPERIMENTAL-STUDY OF THE SUBSTRATE EFFECT ON THE FULLY DEPLETED SOI MOSFET AT LOW-TEMPERATURES

Authors
PAVANELLO MA MARTINO JA COLINGE JP
Citation
Ma. Pavanello et al., THEORETICAL AND EXPERIMENTAL-STUDY OF THE SUBSTRATE EFFECT ON THE FULLY DEPLETED SOI MOSFET AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 67-72
Citations number
8
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
6
Issue
C3
Year of publication
1996
Pages
67 - 72
Database
ISI
SICI code
1155-4339(1996)6:C3<67:TAEOTS>2.0.ZU;2-D
Abstract
In this work is presented a theoretical and experimental analysis of t he substrate potential drop and your influence on the fully depleted S OI MOSFET threshold voltage. This study is done at room temperature an d at liquid nitrogen temperature. Good agreement was found between the simple model and experimental results.