STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS

Authors
MNATSAKANOV TT POMORTSEVA LI SHUMAN VB
Citation
Tt. Mnatsakanov et al., STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS, Journal de physique. IV, 6(C3), 1996, pp. 81-86
Citations number
30
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
6
Issue
C3
Year of publication
1996
Pages
81 - 86
Database
ISI
SICI code
1155-4339(1996)6:C3<81:SOFOMC>2.0.ZU;2-Q
Abstract
A method is proposed for determining the electron - hole scattering pa rameters in indirect gap semiconductors when the carrier injection lev el is low. The proposed method is used to study the electron - hole sc attering in silicon. The results are evidence that minority carrier co mplete drag by majority-electrons is possible in n-type material at a doping level of N-d > 10(17) cm(-3) even at room temperatures.