Tt. Mnatsakanov et al., STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS, Journal de physique. IV, 6(C3), 1996, pp. 81-86
A method is proposed for determining the electron - hole scattering pa
rameters in indirect gap semiconductors when the carrier injection lev
el is low. The proposed method is used to study the electron - hole sc
attering in silicon. The results are evidence that minority carrier co
mplete drag by majority-electrons is possible in n-type material at a
doping level of N-d > 10(17) cm(-3) even at room temperatures.