D. Tsamakis et N. Glezos, STATIC CURRENT-VOLTAGE CHARACTERISTICS OF SILICON N(-I-N(+) RESISTORSAT LIQUID-HELIUM TEMPERATURES()), Journal de physique. IV, 6(C3), 1996, pp. 93-98
The behaviour of the (I-V) characteristics is investigated in n(+)-i-n
(+) highly compensated Si resistors at temperatures 4.2-45K. The condu
ction mechanisms are discussed in detail here. The prebreakdown and br
eakdown regions of I-V characteristics were simulated by a one-dimensi
onal model including the evidence of impurity high compensation and fr
eeze out effects as well as the shallow-dopants impact ionisation by t
he injected hot carriers into the base. Negative resistance (S-type) p
henomena are also observed on the characteristics for high injection c
urrent densities.