STATIC CURRENT-VOLTAGE CHARACTERISTICS OF SILICON N(-I-N(+) RESISTORSAT LIQUID-HELIUM TEMPERATURES())

The behaviour of the (I-V) characteristics is investigated in n(+)-i-n (+) highly compensated Si resistors at temperatures 4.2-45K. The condu ction mechanisms are discussed in detail here. The prebreakdown and br eakdown regions of I-V characteristics were simulated by a one-dimensi onal model including the evidence of impurity high compensation and fr eeze out effects as well as the shallow-dopants impact ionisation by t he injected hot carriers into the base. Negative resistance (S-type) p henomena are also observed on the characteristics for high injection c urrent densities.