EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES

Citation
Mdr. Hashim et al., EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 119-124
Citations number
11
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
6
Issue
C3
Year of publication
1996
Pages
119 - 124
Database
ISI
SICI code
1155-4339(1996)6:C3<119:EOTGOT>2.0.ZU;2-E
Abstract
This paper investigates the effect of using an extrinsic implant on th e behaviour of SiGe HBTs at low temperatures. The collector current ch aracteristics of SiGe HBTs with different geometries are measured at t emperatures from 77 to 300K. The temperature dependence of the collect or current is different for devices with different geometries and this results from base profile broadening in the vicinity of the extrinsic base implant due to point defects. Process and device simulators are used to explain this effect. A method for eliminating this geometry de pendence of the collector current is also described.