CMOS 80 K 300 K SPICE PARAMETER FOR IRFPA READOUT CIRCUIT-DESIGN

This work presents the low temperature characteristics of commercial c omplementary-mental-oxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Me asurements are performed with the temperature calibration of the devic e under test. Two most important temperature dependent parameters of t he drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier freeze out effect is con sidered in the threshold voltage calculation. Two kinds of empirical c arrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extractio n scheme is proposed to extract new mobility model parameters.