A 4.2 K VERY HIGH-GAIN MODULATION FACTOR SILICON DETECTOR MODULATOR/

An n-well ion-implanted resistor is shown to work as a very-linear hig h-gain photodetector at 4.2 K. We take advantage of freeze-out and lig ht assisted carrier ionisation effects to create a photodetector with a current-gain factor G from 1x10(4) to 1.6x10(6). Experimental result s show that at the current gain of 1.6x10(6), excellent Linearity in o ptical response is obtained when the resistor is illuminated with a re d-light source.