HIGH-T-C SQUIDS ON SILICON SUBSTRATES

We have developed high-T-c SQUIDs based on Josephson step-edge junctio ns on silicon substrates. The SQUIDs show a transfer function up to 15 0 mu V/Phi(0) and a white noise of 10(-5)Phi(0)/Hz(1/2) at 50 K. Durin g the last three years extensive investigations of the growth of YBCO. buffer and passivation layers as well as step-preparation and pattern ing processes were necessary to find a standard preparation process co mparable to the preparation of Josephson step-edge junctions on classi cal substrates. In this paper we give an overview on the technical sol utions based on the laser deposition of YBCO/buffer multilayer systems and we discuss Josephson junction and SQUID properties depending on d ifferent device preparation processes.