A STUDY OF CO CU MULTILAYER GROWTH ON SI(111) WITH SILICIDE BUFFER LAYERS/

Authors
EMMERSON CM SHEN TH
Citation
Cm. Emmerson et Th. Shen, A STUDY OF CO CU MULTILAYER GROWTH ON SI(111) WITH SILICIDE BUFFER LAYERS/, Journal of magnetism and magnetic materials, 156(1-3), 1996, pp. 15-16
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Journal of magnetism and magnetic materials → ACNP
ISSN journal
03048853
Volume
156
Issue
1-3
Year of publication
1996
Pages
15 - 16
Database
ISI
SICI code
0304-8853(1996)156:1-3<15:ASOCCM>2.0.ZU;2-S
Abstract
The growth of Co/Cu multilayers on Si(111) substrates has been studied with metal silicides as the initial buffer layers. Epitaxial growth h as been observed on both Co- and Cu-silicides. The values of the magne toresistance of the epitaxial layers were found to be higher for sampl es grown on Cu-silicides than for those on Co-silicides.