CONTROLLED FORMATION OF NANOSCALE MNAS MAGNETIC CLUSTERS IN GAAS

Citation
J. Deboeck et al., CONTROLLED FORMATION OF NANOSCALE MNAS MAGNETIC CLUSTERS IN GAAS, Journal of magnetism and magnetic materials, 156(1-3), 1996, pp. 148-150
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
03048853
Volume
156
Issue
1-3
Year of publication
1996
Pages
148 - 150
Database
ISI
SICI code
0304-8853(1996)156:1-3<148:CFONMM>2.0.ZU;2-K
Abstract
Nanocrystalline MnAs magnetic clusters are formed controllably in GaAs by annealing Molecular Beam Epitaxial grown Ga1-xMnxAs (0.03 < x < 0. 15). Magnetic and structural properties (cluster size, epitaxial regis try) are addressed. The semiconductor matrix is defect free, and excel lent control in cluster location is demonstrated. Semiconductor layers grown on top of a heterogeneous GaAs/MnAs clustered buffer show good optical properties.