REACTIVE SPUTTERING OF TI TARGET WITH NONNEUTRALIZED AR BEAM

Citation
Wb. Peng et al., REACTIVE SPUTTERING OF TI TARGET WITH NONNEUTRALIZED AR BEAM, Solid state communications, 99(3), 1996, pp. 201-204
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
99
Issue
3
Year of publication
1996
Pages
201 - 204
Database
ISI
SICI code
0038-1098(1996)99:3<201:RSOTTW>2.0.ZU;2-0
Abstract
Ion-beam reactive co-sputtering system with separate metal targets of Pb, La and Ti was used to study peculiarities of film growth under dif ferent sputtering energies. Despite the use of a single ion gun to spu tter exclusively the Ti target, the deposited films were polluted with foreign elements in the form of a uniform Pb film and drop-like islan ds of Pb and La. The contamination of uniform film with Pb film could be eliminated by increasing the energy of sputtering ions, whereas the presence of foreign metal islands remained. The roles of both spreadi ng the incident beam and are-effect are discussed. Copyright (C) 1996 Published by Elsevier Science Ltd