Ion-beam reactive co-sputtering system with separate metal targets of
Pb, La and Ti was used to study peculiarities of film growth under dif
ferent sputtering energies. Despite the use of a single ion gun to spu
tter exclusively the Ti target, the deposited films were polluted with
foreign elements in the form of a uniform Pb film and drop-like islan
ds of Pb and La. The contamination of uniform film with Pb film could
be eliminated by increasing the energy of sputtering ions, whereas the
presence of foreign metal islands remained. The roles of both spreadi
ng the incident beam and are-effect are discussed. Copyright (C) 1996
Published by Elsevier Science Ltd