A build-up tip, which was made from a [111]-oriented W filament, was u
sed for scanning tunneling spectroscopy (STS) of Si(111)7x7 to improve
the reproducibility of the tunneling spectra. The apex can be repeate
dly sharpened by applying high voltage while heating it. To clean the
apex region while keeping the sharp apex, thermal-field evaporation (T
FE) techniques were applied for the tip, observing the thermal-field i
on evaporation images, FEM images and FIM images with a chevron MCP sc
reen in a subchamber of an FEM-STM vacuum system. The tip was transfer
red to the STM head and then the change in the FEM images was examined
before and after STM/STS experiments using the FEM-STM, which can be
rapidly switched between the FEM/TFE and the STM/STS operation mode. T
he FEM is sensitive to changes in the workfunction and the outline of
the tip. As a result, the tunneling spectra with sweeping a sample bia
s voltage from 2 to -2 eV were reproducible with little change in the
FEM images. For 3 to -3 eV, however, the reproducibility was poor with
some drastic change in the FEM images. The change was attributed to S
i atom transfer from the sample surface to the tip on the STS measurem
ent, which deteriorated the reliability of the tunneling spectra.