MEV AS AND AU ION-IMPLANTATION IN SI, GAP, GAAS, INSB AND LINBO3 - STUDY OF RANGE AND LATTICE LOCATION

MeV As+ ions into Si and Au2+ ions into Si, GaP, GaAs, InSb and LiNbO3 crystal substrates have been implanted at room temperature and tilted geometry. Using Rutherford backscattering spectrometry and channeling techniques, measurements of the range profile and lattice location of As atoms (dose: 1.0x10(15)/cm(2)) were made. It appears that 95% As a toms are substitutional, For Au implantation, range parameters have be en determined for ion energies 1.37-2.03 MeV for the Si substrate. Mea surements were also made on other substrates implanted with 1.43 MeV A u ions. The measured range values have been compared with TRIM and the so called universal range-energy theories. Our experimental results s how that the theoretically predicted values are underestimated in all the cases. We also present a new approach for the determination of the projected range and straggling - both longitudinal and transverse - f rom a single measurement.