FILM THICKNESS SIMULATION FOR FABRICATING 6 IN DIAMETER ERBCO FILMS BY PARTIALLY-IONIZED BEAM DEPOSITION

Citation
A. Shuhara et al., FILM THICKNESS SIMULATION FOR FABRICATING 6 IN DIAMETER ERBCO FILMS BY PARTIALLY-IONIZED BEAM DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 259-262
Citations number
6
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
111
Issue
3-4
Year of publication
1996
Pages
259 - 262
Database
ISI
SICI code
0168-583X(1996)111:3-4<259:FTSFF6>2.0.ZU;2-S
Abstract
The configuration of a PTB source was studied to grow uniform large-ar ea HTS (high-temperature superconducting) films for application to coi l or tape fabrication. The uniformity of thin films was simulated in c ases where a PIB source was placed with tilted (Theta) and off-axis (L ) orientation on the assumption that the thickness distribution of PIB deposited films followed the (cos alpha)(n) law. The tilted and off-a xis orientation was found to improve the uniformity of the thin films. The calculated uniformity at D = 430, Theta = 30 degrees and L = 30 w as greater than 90%, where D was the source-substrate distance, Fabric ation of HTS films at D = 430 reduced the source consumption and prolo nged the source life significantly, As-deposited films prepared on a 6 in. rotating sample holder at D = 430 have a composition variation of no more than +/-5% and a zero resistance temperature of 78-80 K.