SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING

The concentration profiles of beryllium and magnesium implanted in InS b and InAs at an energy of 200 keV and a dose of 10(15) cm(-2) of bery llium and a dose of 5 x 10(14) cm(-2) of magnesium were investigated b y SIMS analysis, in samples as-implanted and annealed at 300 degrees C -800 degrees C for InAs or at 300 degrees C-450 degrees C for InSb. It is found that in InSb samples the magnesium profiles did not broaden up to 350 degrees C, but beryllium profiles did not even change up to 450 degrees C. In InAs modification of the beryllium profiles in compa rison with InSb occurred at relatively low temperatures about 400 degr ees C and an increase of annealing temperature from 400 degrees C to 7 00 degrees C resulted in a severe distortion of the original profile. At temperatures above 700 degrees C a gettering layer in the region ne ar R(p) resulted from the agglomeration of radiation defects, This lay er acted as a sink of diffused beryllium.