CURRENT-VOLTAGE AND IMPEDANCE CHARACTERISTICS OF NEUTRON-IRRADIATED SILICON DETECTORS AT FLUENCES UP TO 10(16) N CM(2)/

Authors
CROITORU N GAMBIRASIO A RANCOITA PG SEIDMAN A
Citation
N. Croitoru et al., CURRENT-VOLTAGE AND IMPEDANCE CHARACTERISTICS OF NEUTRON-IRRADIATED SILICON DETECTORS AT FLUENCES UP TO 10(16) N CM(2)/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 297-302
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
111
Issue
3-4
Year of publication
1996
Pages
297 - 302
Database
ISI
SICI code
0168-583X(1996)111:3-4<297:CAICON>2.0.ZU;2-0
Abstract
The effect of neutron irradiation at very high fluences up to phi simi lar to 10(16) n/cm(2) on the rectifying properties of silicon high ene rgy detectors was studied. It was shown that at critical fluences, phi (cl) similar to 10(12) - 10(13) n/cm(2) and phi(c2) similar to 1.2 x 1 0(14) n/cm(2), abrupt changes of the forward current, rectifying facto r and other parameters, appear. Measurements of impedance (Z) as a fun ction of frequency (f) show that, after strong irradiation, the real a nd imaginary part of Z and losses depend on f. They may be related to a decrease of lifetime of free carriers, due to traps caused by high i rradiation.