TUNABLE MID-IR DIODE-LASERS BASED ON INGAASSB INASSBP DH/

Recently developed mid-infrared diode lasers based on III-V compounds can be used as an alternative to lead-salt lasers for operation at cry ogenic temperatures in the 3-3.6 mu m range due to high power output a nd stability against moisture. This paper describes properties of InAs , InGaAsSb and InAsSb based double heterostructure diode lasers fabric ated by liquid phase epitaxy on InAs substrates. Tunability with CW cu rrent (9 cm(-1) A(-1)) and temperature (80 nm per 60 K) are discussed together with the model for optical transitions in InAs/InAsSbP and In GaAsSb/InAsSbP double heterostructures, respectively. One of the first application of these lasers in a fibre optic methane gas sensor is de scribed.