APPLICATION OF MEV CARBON-IONS FOR PIXE MEASUREMENTS IN SILICON AND HIGH-T-C SUPERCONDUCTORS

Carbon ion beam, in energy range 3-8 MeV, was applied for PIXE measure ments of silicon samples with diffused or implanted heavy metals and f or measurements of high-T-c YBa2Cu3O7 superconductors. For comparison with the light ion PIXE, a 3 MeV proton beam PIXE was also employed. D ue to the significant decrease of Si-K X-ray production cross section for carbon ion PIXE, much better sensitivity for detection of L and M X-rays of heavy metal impurities can be achieved. Possibilities of hea vy ion PIXE analysis of high-T-c, YBa2Cu3O7 superconductor samples is also discussed.