Gs. Chen et al., ELECTRON-BEAM-INDUCED CRYSTALLIZATION TRANSITION IN SELF-DEVELOPING AMORPHOUS ALF3 RESISTS, Applied physics letters, 69(2), 1996, pp. 170-172
Transmission electron microscopy is used to investigate electron-induc
ed crystallization of thermally evaporated amorphous AlF3(a-AlF3). It
is shown that this material undergoes a very complicated crystallizati
on process with three crystalline substances (Al, AlF3, and Al2O3) for
med as the dose increases. The sequence of the crystallization is high
ly sensitive to the presence of water, which inhibits radiolytic disso
ciation of a-AlF3 into Al and fluorine, reduces the dose required for
the crystallization of a-AlF3, and causes the transformation of AlF3 i
nto Al2O3. (C) 1996 American Institute of Physics.