ELECTRON-BEAM-INDUCED CRYSTALLIZATION TRANSITION IN SELF-DEVELOPING AMORPHOUS ALF3 RESISTS

Citation
Gs. Chen et al., ELECTRON-BEAM-INDUCED CRYSTALLIZATION TRANSITION IN SELF-DEVELOPING AMORPHOUS ALF3 RESISTS, Applied physics letters, 69(2), 1996, pp. 170-172
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
2
Year of publication
1996
Pages
170 - 172
Database
ISI
SICI code
0003-6951(1996)69:2<170:ECTISA>2.0.ZU;2-C
Abstract
Transmission electron microscopy is used to investigate electron-induc ed crystallization of thermally evaporated amorphous AlF3(a-AlF3). It is shown that this material undergoes a very complicated crystallizati on process with three crystalline substances (Al, AlF3, and Al2O3) for med as the dose increases. The sequence of the crystallization is high ly sensitive to the presence of water, which inhibits radiolytic disso ciation of a-AlF3 into Al and fluorine, reduces the dose required for the crystallization of a-AlF3, and causes the transformation of AlF3 i nto Al2O3. (C) 1996 American Institute of Physics.