DEFECT AND TRANSPORT-PROPERTIES OF NANOCRYSTALLINE CEO2-X

Citation
Ym. Chiang et al., DEFECT AND TRANSPORT-PROPERTIES OF NANOCRYSTALLINE CEO2-X, Applied physics letters, 69(2), 1996, pp. 185-187
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
2
Year of publication
1996
Pages
185 - 187
Database
ISI
SICI code
0003-6951(1996)69:2<185:DATONC>2.0.ZU;2-T
Abstract
It is shown that unique defect thermodynamics and transport properties result for prides of a few nanometers crystallite size. Fully-dense C eO2-x, polycrystals of similar to 10 nm grain size were synthesized, a nd their electrical properties compared with those of samples coarsene d from the same material. The nanocrystals showed reduced gain boundar y resistance, 10(4) higher electronic conductivity, and less than one- half the heat of reduction of its coarse-grained counterpart. These pr operties are attributed to a dominant role of interfacial defect forma tion. (C) 1996 American Institute of Physics.