TRIMETHYLARSENIC AS AN ALTERNATIVE TO ARSINE IN THE METALORGANIC VAPOR-PHASE EPITAXY OF DEVICE-QUALITY IN0.53GA0.47AS INP/

We have investigated the use of trimethylarsenic (TMAs) as an alternat ive to arsine in the metalorganic vapor phase epitaxy (MOVPE) of devic e quality InGaAs lattice matched to InP. Films were deposited with ars ine or trimethylarsenic over a wide range of growth conditions in a ho rizontal low pressure (LP)-MOVPE reactor. In order to minimize carbon incorporation, triethylgallium has been chosen instead of trimethylgal lium as the gallium precursor. A minimal growth pressure of 250 mbar a nd a minimal growth temperature of 550 degrees C are found to be neces sary to ensure specular morphology with TMAs. Electrical and optical p roperties of InGaAs layers grown using TMAs in the temperature range 6 00 to 650 degrees C are comparable to those of layers grown using AsH3 . (C) 1996 American Institute of Physics.