THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB ON (111)B GAAS

The molecular beam epitaxial growth of InSb on (111)B GaAs has been in vestigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compar ed to that on (001) GaAs. This difference has been attributed to the b onding characteristics of the (111)B and (001) surface. Once growth ha d been optimized, it was found that the material characteristics of (1 11)B InSb were almost identical to that of (001) InSb, i.e., independe nt of orientation. For example, the x-ray full width at half-maximum a nd 300 K mobility had the same absolute values for (111) InSb and (001 )InSb and followed the same dependence with the sample thickness. Te w as found to be a well-behaved n-type dopant for (111)B InSb. (C) 1996 American Institute of Physics.