STRAIN-MODULATED EPITAXY - A FLEXIBLE APPROACH TO 3-D BAND-STRUCTURE ENGINEERING WITHOUT SURFACE PATTERNING

Thin compliant growth substrates have been used to reduce the strain i n lattice-mismatched overlayers during epitaxial growth, This letter r eports a new thin compliant substrate technology which allows these th in substrates to be patterned on the bottom, bonded surface. This late ral strain variation (inverted stressor) in the growing film can be co mbined with the additional effects of strain-dependent growth kinetics to realize the lateral control of composition and thickness without a ny surface topography on the substrate, Initial demonstrations of the growth of InGaAs on GaAs bottom-patterned thin substrates are presente d herein. (C) 1996 American Institute of Physics.