ARF-EXCIMER-LASER-ASSISTED HIGHLY SELECTIVE ETCHING OF INGAAS INALAS USING HBR AND F2 GAS-MIXTURE/

Highly selective etching of InGaAs/InAlAs was achieved by irradiation with a 193-nm ArF excimer laser in a HBr and F-2 atmosphere. Adding F- 2 gas to the HBr gas enhanced the InGaAs etching rate while reducing t he InAlAs etching rate, resulting in an etching rate ratio of over 450 , The etching mechanism is discussed in terms of pressure dependence a nd laser fluence dependence data, Our findings suggest that ArF-excime r-laser-assisted etching is feasible for gate-recess etching of InGaAs /InAlAs field effect transistors.