BIEXCITON LUMINESCENCE FROM GAN EPITAXIAL LAYERS

Authors
OKADA K YAMADA Y TAGUCHI T SASAKI F KOBAYASHI S TANI T NAKAMURA S SHINOMIYA G
Citation
K. Okada et al., BIEXCITON LUMINESCENCE FROM GAN EPITAXIAL LAYERS, JPN J A P 2, 35(6B), 1996, pp. 787-789
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
6B
Year of publication
1996
Pages
787 - 789
Database
ISI
SICI code
Abstract
Excitonic luminescence from GaN epitaxial layers has been studied unde r high-density excitation. The first experimental evidence for biexcit on formation in GaN was obtained. The binding energy of the biexciton was estimated to be 5.3 meV. Therefore, the ratio of biexciton binding energy to exciton binding energy was approximately 0.19.