PHOTOSENSITIVITY OF GE-DOPED SILICA DEPOSITED BY HOLLOW-CATHODE PECVD

Authors
BAZYLENKO MV GROSS M CHU PL MOSS D
Citation
Mv. Bazylenko et al., PHOTOSENSITIVITY OF GE-DOPED SILICA DEPOSITED BY HOLLOW-CATHODE PECVD, Electronics Letters, 32(13), 1996, pp. 1198-1199
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
13
Year of publication
1996
Pages
1198 - 1199
Database
ISI
SICI code
0013-5194(1996)32:13<1198:POGSDB>2.0.ZU;2-I
Abstract
It is demonstrated that a novel thin film growth technique, hollow cat hode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive ( to UV) germanosilicate waveguide material. In addition, the sign of th e photosensitivity can be altered by varying the growth conditions.