HIGH-SPEED, HIGH-EFFICIENCY RESONANT-CAVITY ENHANCED INGAAS MSM PHOTODETECTORS

Authors
STRITTMATTER A KOLLAKOWSKI S DROGE E BOTTCHER EH BIMBERG D
Citation
A. Strittmatter et al., HIGH-SPEED, HIGH-EFFICIENCY RESONANT-CAVITY ENHANCED INGAAS MSM PHOTODETECTORS, Electronics Letters, 32(13), 1996, pp. 1231-1232
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
13
Year of publication
1996
Pages
1231 - 1232
Database
ISI
SICI code
0013-5194(1996)32:13<1231:HHREIM>2.0.ZU;2-R
Abstract
Resonant-cavity-enhanced In/InGaAs metal-semiconductor-metal photodete ctors designed for 1.31 mu m wavelength and rear illumination are demo nstrated. The bottom mirror of the microcavity consists of an InGaAlAs /InAlAs buried Bragg reflector, and the top mirror comprises the inter digitated contact metallisation and a Si/SiNx quarter wave stack depos ited on the surface. An external quantum efficiency of 77%, and a 3dB bandwidth of 10GHz, are achieved with an InGaAs absorber thickness of 300nm.