THE LEAKAGE CURRENT MECHANISM OF PZT THIN-FILMS DEPOSITED BY IN-SITU SPUTTERING

Authors
HWANG YS PAEK SH MAH JP
Citation
Ys. Hwang et al., THE LEAKAGE CURRENT MECHANISM OF PZT THIN-FILMS DEPOSITED BY IN-SITU SPUTTERING, Journal of materials science letters, 15(12), 1996, pp. 1030-1031
Citations number
7
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
15
Issue
12
Year of publication
1996
Pages
1030 - 1031
Database
ISI
SICI code
0261-8028(1996)15:12<1030:TLCMOP>2.0.ZU;2-T