INFLUENCE OF RADIATION-INDUCED CLUSTERS ON TRANSPORT-PROPERTIES OF SILICON

A calculation method for the scattering cross-section sigma of charged carriers on radiation-induced cluster defects has been developed usin g a spherical cluster model with rectangular potential barrier shape, of radius and height of 15 nm and 0.6 eV, respectively. Values of the cluster cross-section around 2.10(-11) cm(2) have been obtained for ch arged carrier energies from 10(-4) eV to over 600 eV. Applying the rel axation-time approximation of the Boltzmann equation, the influence of clusters on silicon transport properties has been observed to be clos e to the acoustic-phonon one. The dependence of the Hall factor on rad iation-induced clusters has been determined numerically for temperatur es ranging from 5 K to 400 K. The results indicate that the presence o f clusters of such dimensions would not change significantly the Hall coefficient R(H).