EFFECT OF SURFACE-STATES ON THE ELECTRICAL AND OPTICAL CHARACTERISTICS OF INP MIS CAPACITOR

The effect of surface states on the electrical and optical characteris tics of an InP metal-inulator-semiconductor (MIS) capacitor has been s tudied theoretically. The semi-numerical model presented here examines the potential of the device for optically controlled applications. Wh ile the device shows much promise for use as a voltage variable and/or optically controlled capacitor, its performance is seriously limited by the property of the interface between InP crystal and insulator fil m (Al2O3, in this case), where a considerable number of surface states exist with their energy distribution widely spread throughout the cry stal forbidden gap.