STRUCTURE, COMPOSITION, DIELECTRIC, AND AC CONDUCTION STUDIES ON TIN SELENIDE FILMS

Al-SnSe-Al thin film capacitors were fabricated onto well cleaned glas s substrates by thermal evaporation under a pressure of 2 mPa. Multipl e beam interferometry (MBI) was used to measure the thicknesses of the SnSe films. The composition and structure of SnxSe1-x films were anal ysed using Rutherford backscattering spectrometry and X-ray diffractog ram, respectively. The capacitor samples were stabilised by aging and annealing. The variations of the dielectric constant and loss as a fun ction of frequency at different temperatures were observed and the res ults are discussed. AC conduction studies reveal that the conduction m echanism is due to hopping of holes. The activation energies were also calculated.