MBE GROWTH OF STRAINED INXGA1-XAS ON GAAS(001)

Authors
NEMCSICS A OLDE J GEYER M SCHNURPFEIL R MANZKE R SKIBOWSKI M
Citation
A. Nemcsics et al., MBE GROWTH OF STRAINED INXGA1-XAS ON GAAS(001), Physica status solidi. a, Applied research, 155(2), 1996, pp. 427-437
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
155
Issue
2
Year of publication
1996
Pages
427 - 437
Database
ISI
SICI code
0031-8965(1996)155:2<427:MGOSIO>2.0.ZU;2-I
Abstract
Layers of InxGa1-xAs with compositions up to x = 0.4 have been grown o n GaAs(001) substrates by molecular beam epitaxy (MBE). The growth pro cess was monitored by RHEED intensity oscillations. The experimental p arameters were optimized for growing surfaces with well-defined compos itions in a reproducible manner. The intensity variation of the RHEED oscillations can be described reasonably well using a simple model.