ADSORPTION REACTIONS OF TI SI(001) BY VARIABLE-TEMPERATURE STM/
Citation
K. Ishiyama et al., ADSORPTION REACTIONS OF TI SI(001) BY VARIABLE-TEMPERATURE STM/, Surface science, 358(1-3), 1996, pp. 28-31
Categorie Soggetti
Chemistry Physical
SICI code
0039-6028(1996)358:1-3<28:AROTSB>2.0.ZU;2-P
Abstract
Monatomic adsorption of ii on the Si(001)-2 x 1 surface has been obser
ved by variable-temperature scanning tunneling microscopy. A Ti alum i
s reversibly converted between two precursor states which are pedestal
site adsorption and a highly mobile state between the dimer rows. The
final stale, that is a vacancy site adsorption, is formed only from t
he pedestal site adsorption inducing ejection of Si dimer atoms. The q
uantitative and qualitative evaluation of the site conversion reveals
that the adsorption behavior is highly affected by the local bonding p
roperties of Ti with the Si 2 x 1 reconstruction.