ADSORPTION REACTIONS OF TI SI(001) BY VARIABLE-TEMPERATURE STM/

Citation
K. Ishiyama et al., ADSORPTION REACTIONS OF TI SI(001) BY VARIABLE-TEMPERATURE STM/, Surface science, 358(1-3), 1996, pp. 28-31
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
28 - 31
Database
ISI
SICI code
0039-6028(1996)358:1-3<28:AROTSB>2.0.ZU;2-P
Abstract
Monatomic adsorption of ii on the Si(001)-2 x 1 surface has been obser ved by variable-temperature scanning tunneling microscopy. A Ti alum i s reversibly converted between two precursor states which are pedestal site adsorption and a highly mobile state between the dimer rows. The final stale, that is a vacancy site adsorption, is formed only from t he pedestal site adsorption inducing ejection of Si dimer atoms. The q uantitative and qualitative evaluation of the site conversion reveals that the adsorption behavior is highly affected by the local bonding p roperties of Ti with the Si 2 x 1 reconstruction.