MOS INTERFACE CHARACTERIZATION BY CROSS-SECTIONAL STM

The application of tire cross-sectional scanning tunneling microscope (XSTM) to the interface observation of metal-oxide-semiconductor (MOS) structure formed on Si(lll) was described. The STM images revealed th e morphology of the MOS interface region where the cleaved Si part sho wed a novel reconstructed structure of Si(111)-8 x 1 and the metal (Au ) layer of similar to 10 nm higher from the Si portion was fractured d uring the cleaving process. Scanning tunneling spectroscopy (STS) meas urement on the Si part showed systematic shifts of the spectra with th e application of the bias voltages between the metal and the Si, which agreed well with the expected band bending in the Si qualitatively.