We report results of a scanning tunneling microscopy and spectroscopy
investigation of the initial process of AE thin-film growth on hydroge
n-terminated Si(111) surfaces. It has been shown that Ag clusters are
formed on the hydrogen-terminated restlayer when Ag is deposited at 30
0 degrees C, Large silicon-hydride clusters, which have been produced
by hydrogen adsorption on clean surfaces, are desorbed by the Ag depos
ition and only small ones remain on the restlayer among Ag clusters.