A DIELECTRIC MATRIX CALCULATION OF THE SURFACE-PLASMON ENERGY FOR THESILICON(100) SURFACE

Authors
FORSYTH AJ SMITH AE JOSEFSSON TW
Citation
Aj. Forsyth et al., A DIELECTRIC MATRIX CALCULATION OF THE SURFACE-PLASMON ENERGY FOR THESILICON(100) SURFACE, Surface science, 358(1-3), 1996, pp. 270-273
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
270 - 273
Database
ISI
SICI code
0039-6028(1996)358:1-3<270:ADMCOT>2.0.ZU;2-0
Abstract
As an extension of previous work, we present preliminary calculations for the dielectric properties of the silicon (100) surface. In particu lar, the \q\ - 2 pi/a(0,0,0) and \q\ - 2 pi/a(1,0,0) surface loss func tion, and corresponding plasmon energies have been calculated within a simple model for the silicon surface. Results are compared and contra sted with volume plasmon calculations and experiment.