SIMULATIONS FOR STRUCTURAL-PROPERTIES AND CRYSTAL-GROWTH ON SI(001) SURFACE

Authors
TERAKURA K UDA T YAMASAKI T MIYAZAKI T
Citation
K. Terakura et al., SIMULATIONS FOR STRUCTURAL-PROPERTIES AND CRYSTAL-GROWTH ON SI(001) SURFACE, Surface science, 358(1-3), 1996, pp. 394-401
Citations number
31
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
394 - 401
Database
ISI
SICI code
0039-6028(1996)358:1-3<394:SFSACO>2.0.ZU;2-T
Abstract
Novel structure models for the so-called C-type defect on Si(001) surf aces are proposed, The key idea in the models is a missing Si atom in the, second surface layer, The proposed models are locally very stable and give STM images consistent with the observed one, The second subj ect is the analysis on the initial processes of the homoepitaxial crys tal growth on Si(001) surfaces. The stability of several ad-Si atom cl usters and the activation energies for some elementary processes are d iscussed.