CHEMICAL SELECTIVITY WITH ESD OF CHLORINATED SILICON SPECIES

Authors
GUO Q STERRATT D WILLIAMS EM
Citation
Q. Guo et al., CHEMICAL SELECTIVITY WITH ESD OF CHLORINATED SILICON SPECIES, Surface science, 358(1-3), 1996, pp. 402-406
Citations number
17
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
402 - 406
Database
ISI
SICI code
0039-6028(1996)358:1-3<402:CSWEOC>2.0.ZU;2-5
Abstract
The decomposition of SiCl4 on Si(LOO) surfaces was studied with electr on-stimulated desorption (ESD) of positive and negative atomic chlorin e species in conjunction with Auger electron spectroscopy and thermal desorption spectroscopy over the temperature range 120-200 K. Changes of ion yield, particularly the relative signals of positive and negati ve ions, are shown to offer a very sensitive monitor of adsorbate form s and decomposition processes at the surface.