SPACE FLUCTUATION OF EMPTY STATES ON 3C-SIC(001) SURFACE

We present a spatial fluctuation of empty states, obtained with scanni ng tunneling microscopy (STM), on clean 3C-SiC(001)-3 x 2 surface, for med by in situ cleaning, while filled stales are apparently well-order ed. The fluctuation is an intrinsic disorder firstly observed on a cle an semiconductor surface. The: disorder is caused by inter-dimer buckl ing of a pair of Si dimers in a 3 x 2 unit cell, A buckling direction in each cell is determined individually independent from the direction s of adjacent: bucklings, resulting in the Intrinsic surface disorder. The disorder is stable for longer times and for multiple tip scanning s under STM observations, The random buckling direction originates fro m the isolation of each dimer pair from adjacent dimer pairs. The enha nced fluctuation in the budding in the empty states is caused by charg e transfer from an up-dimer to a down-dimer in a dimer pair.