QUENCHED SI(111)-DAS (DIMER-ADATOM-STACKING FAULT) STRUCTURES STUDIEDBY SCANNING-TUNNELING-MICROSCOPY

Stacking-fault (SF) half-units oi N x N(N = 5 to 11) DAS (dimer-adatom -stacking fault) structures were observed to be quenched on the Si(111 ) surface, and to be surrounded by disordered 1 x 1 phase, From analys is by bias dependent scanning tunneling microscopy, which reflects cha rge transfer between top-layer adatoms and underlayers, Si dimers were found to remain al the boundary between the SF half-units of the DAS structures and the disordered 1 x 1 phase.