STUDIES OF SURFACE STRESS BY REFLECTION ELECTRON-MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY

Surface stress on Si surfaces was studied by reflection electron micro scopy (REM) and transmission electron microscopy (TEM). For REM studie s, a new specimen holder which can give strain to specimen surfaces wa s designed and constructed. Using this holder the specimen can be heat ed up to 1200 degrees C and a strain of similar to 0.1% can be applied to surfaces of Si crystals with a thickness of similar to 0.15 mm. Us ing the new holder, conversion processes between the (2 x 1) and (1 x 2) domains were observed in situ and compared with previous results ob tained by LEED, It was found that the effect of heating current, which also causes the conversion of the major domains, disappears under a s train of similar to 0.05%. TEM studies were carried cut for Si(111)-(7 x 7) and Si(111)-(5 x 2)-Au surfaces.