HIGH-RESOLUTION HELIUM ATOM SCATTERING FROM AN EPITAXIALLY GROWN ONE MONOLAYER FILM OF KCN ON KBR(001)

Citation
J. Baker et al., HIGH-RESOLUTION HELIUM ATOM SCATTERING FROM AN EPITAXIALLY GROWN ONE MONOLAYER FILM OF KCN ON KBR(001), Surface science, 358(1-3), 1996, pp. 639-644
Citations number
42
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
639 - 644
Database
ISI
SICI code
0039-6028(1996)358:1-3<639:HHASFA>2.0.ZU;2-A
Abstract
High resolution helium atom diffraction and single phonon inelastic sc attering experiments were performed on a single monolayer KCN film epi taxially grown onto a KBr(001) substrate. Although the cleaved surface of single crystal KCN appears disordered, the one monolayer film was stabilized by the substrate. The measurements from this film in the [1 00] direction gave dispersion curves with a Rayleigh mode, a dispersio nless mode near 12 meV, a possible crossing mode, and a suggestion of a weak interface mode near 2 meV. The Debye temperature of the film wa s found to be 127 K, which was very close to that found for the cleave d single crystal KCN. A kink in the Debye-Waller factor near 150-160 K may be associated with a surface phase transition.