PHOTOETCHING ANISOTROPY OF HEAVILY-DOPED SI(100) AND SI(111) SURFACES

Understanding the fundamental features of anisotropic microetching on a molecular scale is required to clarify the major mechanisms defining the surface morphology of micropatterning, Static and dynamic measure ments determine the variables which distinguish the balance between ki netic and equilibrium contributions controlling the surface microstruc ture. Attention is directed here specifically towards the steady state surface chemistry of highly doped silicon and the subsequent photoetc hing characteristics using above bandgap ultraviolet excitation.