MOLECULAR-DYNAMICS SIMULATION OF THE THIN-FILM FABRICATION PROCESS

There is an increased demand of the explanation of the thin film fabri cation mechanism, especially for thickness uniformity, film quality an d product yield. Any modeling of the mechanism requires a sufficient k nowledge of the basic mechanism of interaction and reaction of the par ticles with the substrate, As a first step, here, the model of silicon thin film formation under low-pressure CVD is considered, Silicon fil m formation and growth on a clean solid substrate is simulated applyin g the molecular dynamics and chemical reaction principles. The analyze d domain is enclosed in a hexagonal box which has periodic boundary co nditions and a different flow energy of the particle, The atom surface adsorption and inelastic collision are discussed considering the exch ange energy between the particles and the surface, In order to provide a well visualized description, a graphics program is made to show the particle movement and the film fabricating process in three dimension s. The present simulation is advantageous to the macro-understanding o f the thin film formation mechanism and to fabricating the machine des ign with optimum control.