SURFACTANT EFFECT OF HYDROGEN FOR NICKEL GROWTH ON SI(111)7X7 SURFACE

Authors
Citation
K. Murano et K. Ueda, SURFACTANT EFFECT OF HYDROGEN FOR NICKEL GROWTH ON SI(111)7X7 SURFACE, Surface science, 358(1-3), 1996, pp. 910-916
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
358
Issue
1-3
Year of publication
1996
Pages
910 - 916
Database
ISI
SICI code
0039-6028(1996)358:1-3<910:SEOHFN>2.0.ZU;2-0
Abstract
In this report we will describe a 'surfactant effect' of hydrogen for nickel on Si(111)7 x 7 surface terminated by atomic hydrogen prior to Ni-deposition. For hydrogen detection, time-of-flight type electron-st imulated desorption (TOF-ESD) spectroscopy was used complementary with Auger analysis, LEED and RHEED, 2-monolayer (ML) Ni film was grown on a Si(111)7 x 7 surface in layer-by-layer growth mode and changed to 3 -dimensional Stranski-Krastanov mode over 2 ML. The 7 x 7 LEED pattern was observed to 2 ML(-) of Ni. The Si-LVV Anger peak was observed to IO ML. In contrast, a hydrogen-terminated surface showed d-7 x 7 struc ture where the ESD measurement showed 1.5 ML of hydrogen, the Si-LVV A uger peak had disappeared at 7 ML of Ni taking layer-by-layer mode, na mely, Frank-Van der Merwe growth mode.