HYDROGEN-INDUCED DEFECTS IN POLYCRYSTALLINE SILICON

The incorporation of hydrogen in polycrystalline silicon (poly-Si) is essential to improve the materials properties which contains a high de nsity of localized states in the grain-boundary regions. The presence of hydrogen in poly-Si gives rise to new and hitherto unexpected pheno mena. In this paper, light-induced defect creation and H-induced metas table changes of the dark conductivity are reviewed. Experimental evid ence is presented which demonstrates the direct participation of H in the metastable effects.